3,831 research outputs found
Deposition of reactively ion beam sputtered silicon nitride coatings
An ion beam source was used to deposit silicon nitride films by reactively sputtering a silicon target with beams of Ar + N2 mixtures. The nitrogen fraction in the sputtering gas was 0.05 to 0.80 at a total pressure of 6 to 2 millionth torr. The ion beam current was 50 mA at 500 V. The composition of the deposited films was investigated by auger electron spectroscopy and the rate of deposition was determined by interferometry. A relatively low rate of deposition of about 2 nm. one-tenth min. was found. AES spectra of films obtained with nitrogen fractions higher than 0.50 were consistent with a silicon to nitrogen ratio corresponding to Si3N4. However the AES spectra also indicated that the sputtered silicon nitride films were contaminated with oxygen and carbon and contained significant amounts of iron, nickel, and chromium, most probably sputtered from the holder of the substrate and target
Protective coatings of metal surfaces by cold plasma treatment
The cold plasma techniques for deposition of various types of protective coatings are reviewed. The main advantage of these techniques for deposition of ceramic films is the lower process temperature, which enables heat treating of the metal prior to deposition. In the field of surface hardening of steel, significant reduction of treatment time and energy consumption were obtained. A simple model for the plasma - surface reactions in a cold plasma system is presented, and the plasma deposition techniques are discussed in view of this model
The first passage problem for diffusion through a cylindrical pore with sticky walls
We calculate the first passage time distribution for diffusion through a
cylindrical pore with sticky walls. A particle diffusively explores the
interior of the pore through a series of binding and unbinding events with the
cylinder wall. Through a diagrammatic expansion we obtain first passage time
statistics for the particle's exit from the pore. Connections between the model
and nucleocytoplasmic transport in cells are discussed.Comment: v2: 13 pages, 6 figures, substantial revision
Sputtered silicon nitride coatings for wear protection
Silicon nitride films were deposited by RF sputtering on 304 stainless steel substrates in a planar RF sputtering apparatus. The sputtering was performed from a Si3N4 target in a sputtering atmosphere of argon and nitrogen. The rate of deposition, the composition of the coatings, the surface microhardness and the adhesion of the coatings to the substrates were investigated as a function of the process parameters, such as: substrate target distance, fraction nitrogen in the sputtering atmosphere and sputtering pressure. Silicon rich coating was obtained for fraction nitrogen below 0.2. The rate of deposition decreases continuously with increasing fraction nitrogen and decreasing sputtering pressure. It was found that the adherence of the coatings improves with decreasing sputtering pressure, almost independently of their composition
Some properties of RF sputtered hafnium nitride coatings
Hafnium nitride coatings were deposited by reactive RF sputtering from a hafnium target in nitrogen and argon gas mixtures. The rate of deposition, composition, electrical resistivity and complex index of refraction were investigated as a function of target substrate distance and the fraction nitrogen, (fN2) in the sputtering atmosphere. The relative composition of the coatings is independent on fN2 for values above 0.1. The electric resistivity of the hafnium nitride films changes over 8 orders of magnitude when fN2 changes from 0.10 to 0.85. The index of refraction is almost constant at 2.8(1-0.3i) up to fN2 = 0.40 then decreases to 2.1(1 - 0.01i) for higher values of fN2
Correlations between plasma variables and the deposition process of Si films from chlorosilanes in low pressure RF plasma of argon and hydrogen
The dissociation of chlorosilanes to silicon and its deposition on a solid substrate in a RF plasma of mixtures of argon and hydrogen were investigated as a function of the macrovariables of the plasma. The dissociation mechanism of chlorosilanes and HCl as well as the formation of Si in the plasma state were studied by sampling the plasma with a quadrupole mass spectrometer. Macrovariables such as pressure, net RF power input and locations in the plasma reactor strongly influence the kinetics of dissociation. The deposition process of microcrystalline silicon films and its chlorine contamination were correlated to the dissociation mechanism of chlorosilanes and HCl
Determining physical properties of the cell cortex
Actin and myosin assemble into a thin layer of a highly dynamic network
underneath the membrane of eukaryotic cells. This network generates the forces
that drive cell and tissue-scale morphogenetic processes. The effective
material properties of this active network determine large-scale deformations
and other morphogenetic events. For example,the characteristic time of stress
relaxation (the Maxwell time)in the actomyosin sets the time scale of
large-scale deformation of the cortex. Similarly, the characteristic length of
stress propagation (the hydrodynamic length) sets the length scale of slow
deformations, and a large hydrodynamic length is a prerequisite for long-ranged
cortical flows. Here we introduce a method to determine physical parameters of
the actomyosin cortical layer (in vivo). For this we investigate the relaxation
dynamics of the cortex in response to laser ablation in the one-cell-stage {\it
C. elegans} embryo and in the gastrulating zebrafish embryo. These responses
can be interpreted using a coarse grained physical description of the cortex in
terms of a two dimensional thin film of an active viscoelastic gel. To
determine the Maxwell time, the hydrodynamic length and the ratio of active
stress and per-area friction, we evaluated the response to laser ablation in
two different ways: by quantifying flow and density fields as a function of
space and time, and by determining the time evolution of the shape of the
ablated region. Importantly, both methods provide best fit physical parameters
that are in close agreement with each other and that are similar to previous
estimates in the two systems. We provide an accurate and robust means for
measuring physical parameters of the actomyosin cortical layer.It can be useful
for investigations of actomyosin mechanics at the cellular-scale, but also for
providing insights in the active mechanics processes that govern tissue-scale
morphogenesis.Comment: 17 pages, 4 figure
Electronic structure of unidirectional superlattices in crossed electric and magnetic fields and related terahertz oscillations
We have studied Bloch electrons in a perfect unidirectional superlattice
subject to crossed electric and magnetic fields, where the magnetic field is
oriented ``in-plane'', i.e. in parallel to the sample plane. Two orientation of
the electric field are considered. It is shown that the magnetic field
suppresses the intersubband tunneling of the Zener type, but does not change
the frequency of Bloch oscillations, if the electric field is oriented
perpendicularly to both the sample plane and the magnetic field. The electric
field applied in-plane (but perpendicularly to the magnetic field) yields the
step-like electron energy spectrum, corresponding to the magnetic-field-tunable
oscillations alternative to the Bloch ones.Comment: 7 pages, 1 figure, accepted for publication in Phys. Rev.
Spindle Positioning by Cortical Pulling Forces
SummaryProper spatial control of the cell division plane is essential to any developing organism. In most cell types, the relative size of the two daughter cells is determined by the position of the mitotic spindle within the geometry of the mother cell. We review the underlying mechanisms responsible for positioning of the mitotic spindle, both in cases where the spindle is placed in the center of the cell and in cases where the spindle is placed away from the center of the cell. We discuss the idea that cortical pulling forces are sufficient to provide a general mechanism for spindle positioning within symmetrically and asymmetrically dividing cells
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